Improvements on the Advanced Compact MOSFET Model and its Application to the Design by Hand of Analog Circuits
CMOS analog design; MOSFET modeling; MOSFET characterization.
This Thesis presents an improved version of the Advanced Compact MOSFET model (ACM model) for application in hand calculations, required in the design of CMOS analog integrated circuits. The here accomplished research gave rise to semiempirical sub-models to be introduced into the basic model of the MOSFET drain current. These sub-models take into account second order effects, thus increasing the accuracy of the ACM model in the design stage of preliminary device dimensioning, which precedes the simulation stage. Methodologies have also been developed for the extraction of modeling parameters and have been applied to simulated DC characteristics from a CMOS 130 nm technology. The chief aim of this remodeling approach is to minimize the time spent in analog circuit design, by allowing reducing the number of iterations between the stages of hand calculation and simulation. Systematic methodologies have been proposed to the design of some basic CMOS analog cells, using the improved and original versions of the ACM model. The application of these methodologies to several design examples made it possible to compare simulation results, using the dimensions obtained from design by hand, with the specifications and hence to verify the reliability of the improved ACM model.